Gallium arsenide metal semiconductor FET for HF communications system

摘要

The semiconductor component has a semiconductor substrate (1) with an upper side. The component also has a recess (3) with a lower surface and side surfaces arranged on the upper side of the substrate. The component has an n-type region (5) of lower concentration arranged in part of the substrate directly below the lower side of the recess. The n-type region extends over the whole width of the recess lower side. The component also has n-type regions (9a,9b) of higher concentration. The n-type regions of higher concentration are arranged in parts of the substrate adjacent the lower concentration n-type region. The component also has a gate electrode (7) made of high melt metal and is arranged in the recess adjacent to the lower concentration n-type region. Ohmic electrodes (10a,b) are each arranged on respective n-type regions of higher concentration.