| 发明名称 |
Integrated circuit including field effect transisitors |
| 摘要 |
<p>An integrated circuit with FETs having an essentially uniform gate oxide thickness and FETs having gate oxide thickness enhanced along the sides. FETs with enhanced gate oxide have an ONO layer (126) diffused with Potassium in close proximity to the enhanced (thicker) oxide, and, as a result, have a slightly higher Vt and much more attenuated soft turn on.</p> |
| 申请公布号 |
EP0822597(A2) |
申请公布日期 |
1998.02.04 |
| 申请号 |
EP19970305172 |
申请日期 |
1997.07.14 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;SIEMENS AKTIENGESELLSCHAFT |
发明人 |
HAUF, MANFRED;LEVY, MAX G.;NASTASI, VICTOR RAY |
| 分类号 |
H01L27/08;H01L21/8242;H01L27/108;(IPC1-7):H01L27/088;H01L21/824 |
主分类号 |
H01L27/08 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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