发明名称 |
Gate structure of field effect device and method for forming the same |
摘要 |
<p>An insulated gate field effect semiconductor device comprising a substrate having provided thereon a thin-film structured insulated gate field effect semiconductor device, said device being characterized by that it comprises a metal gate electrode and at least the side thereof is coated with an oxide of the metal. The insulated gate field effect semiconductor device according to the present invention is also characterized by that the contact holes for the extracting contacts of the source and drain regions are provided at about the same position of the end face of the anodically oxidized film established at the side of the gate. Furthermore, the present invention provides a method for forming insulated gate field effect semiconductor devices using less masks. <IMAGE></p> |
申请公布号 |
EP0502749(B1) |
申请公布日期 |
1998.02.04 |
申请号 |
EP19920301951 |
申请日期 |
1992.03.06 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI, SHUNPEI;MASE, AKIRA;HAMATANI, TOSHIJI |
分类号 |
G02F1/1362;H01L21/336;H01L21/60;H01L27/12;H01L29/49;H01L29/786;(IPC1-7):H01L29/772;H01L29/43;H01L29/41 |
主分类号 |
G02F1/1362 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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