发明名称 Self-biasing, non-magnetic, giant magnetoresistance sensor
摘要 <p>A sensor with a magnetoresistive effect for sensing magnetic patterns, stored as a series of magnetic domains in a storage device, comprises: an inhomogeneous layer of magnetoresistive material overlying a substrate where the layer of material is mercury-cadmium-telluride (Hg1-xCdxTe); electrodes attached to the inhomogeneous layer of magnetoresistive material. A method of manufacture is also claimed.</p>
申请公布号 EP0822541(A2) 申请公布日期 1998.02.04
申请号 EP19970113010 申请日期 1997.07.29
申请人 NEC CORPORATION 发明人 KAWANO, MASAYA;SOLIN, STUART A.;THIO, TINEKE
分类号 G01R33/09;G11B5/33;G11B5/37;G11B5/39;H01L43/08;(IPC1-7):G11B5/39 主分类号 G01R33/09
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