发明名称 Improvements in or relating to integrated circuits
摘要 <p>An ESD protected semiconductor circuit and the ESD protection circuit. The protected circuit includes a terminal (33), a semiconductor device (31) coupled to the terminal and an ESD protection circuit (35). The ESD protection circuit includes a substrate (1) of a first conductivity type and has a surface (9). A first well (3) of conductivity type opposite to the first conductivity type is disposed within the substrate and extends to the surface. A second well (5) of the first conductivity type is disposed within the first well and is spaced from the substrate and extending to the surface. A third region (7) of the opposite conductivity type is disposed within the second well and is spaced from the first well and extending to the surface. At least one of the substrate or the third region is coupled to the terminal. &lt;IMAGE&gt;</p>
申请公布号 EP0822596(A2) 申请公布日期 1998.02.04
申请号 EP19970305850 申请日期 1997.08.01
申请人 TEXAS INSTRUMENTS INC. 发明人 AMERASEKERA, E. AJITH
分类号 H01L27/06;H01L21/8242;H01L23/60;H01L27/02;H01L27/108;(IPC1-7):H01L27/02 主分类号 H01L27/06
代理机构 代理人
主权项
地址