High-speed low-power consumption semiconductor non-volatile memory device

摘要

A current source (55) of a semiconductor read only memory device supplies current through a digit line (DL0-DLk) to a memory cell so as to seen whether the memory cell is implemented by an enhancement type transistor or a depletion type transistor, and a potential transferring circuit (57) either discharges a precharge level from an input line (SIL) connected to a sense amplifier (52) or maintains the precharge level depending upon the potential level at the drain node of the memory cell so that a small amount of parasitic capacitance of the input line allows the sense amplifier to rapidly determine the operation mode of the memory cell. <IMAGE>