发明名称 |
GROWING A NITROGEN DOPED EPITAXIAL II-VI COMPOUND LAYER ON A SINGLE CRYSTAL SUBSTRATE |
摘要 |
The concentration of N acceptors in an as-grown epitaxial layer of a II-VI semiconductor compound is enhanced by the use of tertiary butyl amine as the dopant carrier, and is further enhanced by the use of photo-assisted growth using illumination whose wavelength is at least above the bandgap energy of the compound at the growth temperature. |
申请公布号 |
EP0660886(B1) |
申请公布日期 |
1998.02.04 |
申请号 |
EP19940918492 |
申请日期 |
1994.07.04 |
申请人 |
PHILIPS ELECTRONICS N.V. |
发明人 |
TASKAR, NIKHIL;KHAN, BABAR;DORMAN, DONALD |
分类号 |
C30B29/48;C23C16/18;C30B25/02;C30B25/10;H01L21/205;H01L21/365 |
主分类号 |
C30B29/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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