发明名称 |
Integrated piezoresistive pressure sensor and relative fabrication method |
摘要 |
<p>The pressure sensor is integrated in a SOI (Silicon-on-Insulator) substrate using the insulating layer as a sacrificial layer, which is partly removed by chemical etching to form the diaphragm. To fabricate the sensor, after forming the piezoresistive elements (10) and the electronic components (4, 6-8) integrated in the same chip, trenches (26) are formed in the upper wafer (23) of the substrate and extending from the surface to the layer of insulating material (22); the layer of insulating material (22) is chemically etched through the trenches (26) to form an opening (31) beneath the diaphragm (27); and a dielectric layer (25) is deposited to outwardly close the trenches (26) and the opening (31). Thus, the process is greatly simplified, and numerous packaging problems eliminated. <IMAGE> <IMAGE></p> |
申请公布号 |
EP0822398(A1) |
申请公布日期 |
1998.02.04 |
申请号 |
EP19960830435 |
申请日期 |
1996.07.31 |
申请人 |
STMICROELECTRONICS S.R.L. |
发明人 |
VIGNA, BENEDETTO;FERRARI, PAOLO;VILLA, FLAVIO |
分类号 |
G01L9/06;B81B3/00;B81C1/00;G01L9/00;H01L29/84;(IPC1-7):G01L9/06 |
主分类号 |
G01L9/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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