发明名称 Method of manufacturing optical semiconductor element
摘要 <p>In a method of manufacturing an optical semiconductor element including at least the steps of forming a mask having a stripe-like gap or interval on a semiconductor substrate, epitaxially growing a semiconductor ridge including an active layer on only an exposed gap portion of the semiconductor substrate, and epitaxially growing a semiconductor cladding layer to cover the ridge, the thickness of the active layer is substantially the same as the width of the active layer. <IMAGE></p>
申请公布号 EP0525779(B1) 申请公布日期 1998.02.04
申请号 EP19920113029 申请日期 1992.07.30
申请人 NEC CORPORATION 发明人 KITAMURA, SHOTARO
分类号 H01L21/20;H01L27/15;H01S5/00;H01S5/227;H01S5/50;(IPC1-7):H01L33/00;H01S3/25;H01S3/085;H01S3/19 主分类号 H01L21/20
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