| 摘要 |
PROBLEM TO BE SOLVED: To provide a photoconductor having a deep impurity level by using the method called ion implantation. SOLUTION: An<+> ions are injected into the surface of an InP substrate 1, which is the semi-insulating semiconductor substrate, by using the known ion implanting technology at the acceleration voltage of 100keV, and the implanted amount of 1×10<14> ion/cm<2> , and a Zn<+> implanted layer 2 is formed (a). Thereafter, the Zn<+> implanted layer 2 undergoes lamp annealing at about 700 deg.C-2sec and an electrode layer 3 is formed on the Zn<+> layer 2 (b). Then, etching is selectively performed for the electrode layer 3 and the Zn<+> ion implanted layer 2, and a nallow gap 4 is formed (c).
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