发明名称 |
Semiconductor device having a gate electrode in a grove and a diffused region under the grove |
摘要 |
A power MOSFET having a groove for forming a channel improved for shortening the switching time and increasing the dielectric breakdown strength of the gate oxide film is disclosed. The power MOSFET includes a concave structure in which a gate oxide film at a groove bottom is thickened. Namely, since the gate oxide film between a gate electrode and a first conductivity type semiconductor layer is thick, the capacitance of the oxide film therebetween is reduced. Therefore, the input and output capacitance of the gate oxide film can be reduced, and switching loss can be also reduced since the switching time can be shortened. Further, greater dielectric breakdown strength of the gate oxide film can be obtained as a result of the thickened gate oxide film at the groove bottom.
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申请公布号 |
US5714781(A) |
申请公布日期 |
1998.02.03 |
申请号 |
US19960638388 |
申请日期 |
1996.04.26 |
申请人 |
NIPPONDENSO CO., LTD. |
发明人 |
YAMAMOTO, TSUYOSHI;NAITO, MASAMI;FUKAZAWA, TAKESHI |
分类号 |
H01L21/336;H01L29/08;H01L29/423;H01L29/78;(IPC1-7):H01L29/76;H01L29/94 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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