| 摘要 |
PROBLEM TO BE SOLVED: To lessen a high-resistance load static RAM in current consumption without increasing its high resistance part in length, by a method wherein a wiring part coming into contact with the high resistance part is set smaller in thickness than the high-resistance part. SOLUTION: A high-resistance load static RAM is formed on a semiconductor substrate through such a manner that an insulating film 2 is formed on a silicon substrate 1 through a CVD method or a thermal oxidation method, and a polycrystalline silicon layer 3 is formed thereon through a CVD method, and then formed into a high resistance part 4 and a wiring part 5 through a photolithography method and an ion implantation method. At this point, a part 6 out of the wiring 5 in contact with the high-resistance part 4 is set thinner than the high-resistance part 4 by dry etching carried out using a photoresist pattern as a mask. |
