发明名称 PRODUCTION OF BCN BASED MATERIAL HAVING CRYSTAL STRUCTURE AT HIGH PRESSURE PHASE
摘要 PROBLEM TO BE SOLVED: To obtain a BCN based material with removed starting materials, small in impurities and having a crystal structure at high pressure phase by allowing a high pressure phase crystal structural material obtained by phase- changing the starting materials consisting of one of carbon and nitrogen or both and boron to contact with an active element plasma. SOLUTION: The starting materials are selectively removed by allowing the high pressure phase crystal structural material obtained by phase-changing the starting materials consisting boron (B), carbon (C) and nitrogen (N) or boron and carbon or nitrogen to contact with the active element plasma. As the high pressure phase crystal structural material, for example, a wurtzite type boron nitride and a BCN material having a diamond type crystal structure are exemplified. As the active plasma, a reaction gas containing halogen such as fluorine, chlorine is effectively used.
申请公布号 JPH1029814(A) 申请公布日期 1998.02.03
申请号 JP19960187661 申请日期 1996.07.17
申请人 AGENCY OF IND SCIENCE & TECHNOL;ASAHI CHEM IND CO LTD 发明人 FUJIWARA SHUZO;KAKUDATE YOUZOU;SAMEJIMA YOSHIO;AWANO TERUYUKI
分类号 B01J3/06;B01J19/08;C01B21/064;C01B31/36;C01B35/02 主分类号 B01J3/06
代理机构 代理人
主权项
地址