| 发明名称 |
Method for forming contact hole of semiconductor device |
| 摘要 |
A method of forming a contact hole through an interlayer insulation layer in a semiconductor device using a sidewall spacer formed on the sidewalls of a pattern hole in a photosensitive film which serves as a mask to an anisotropic etching process used to form the contact hole.
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| 申请公布号 |
US5714038(A) |
申请公布日期 |
1998.02.03 |
| 申请号 |
US19960652235 |
申请日期 |
1996.05.23 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, BYEUNG-CHUL |
| 分类号 |
H01L21/28;H01L21/033;H01L21/3205;H01L21/768;H01L23/52;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/28 |
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代理人 |
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