发明名称 |
Magnetoresistance element, magnetoresistive head and magnetoresistive memory |
摘要 |
A magnetoresistance element has a structure of a magnetic film 3, a nonmagnetic film 2 and a magnetic film 1 layered successively, and the nonmagnetic film is made of a mixture of electrical conductors and insulators. Then, magnetic coupling between the magnetic films 1 and 3 is reduced. Further, because it is possible to detect a magnetic field by supplying a current along a film plane, a large change in magnetoresistance is observed, or the sensitivity is high. Modified magnetoresistance elements are also described including a film 4 suppressing magnetization reversal or an interface magnetic film 5. A magnetic head for a hard disk is produced by adding a yoke to the magnetoresistance element. A memory device having a plurality of magnetoresistance elements is produced by adding word lines and the like thereto.
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申请公布号 |
US5715121(A) |
申请公布日期 |
1998.02.03 |
申请号 |
US19960768466 |
申请日期 |
1996.12.18 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
SAKAKIMA, HIROSHI;IRIE, YOUSUKE |
分类号 |
G01R33/09;G11B5/39;G11C11/14;G11C11/15;H01F10/08;H01F10/12;H01F10/13;H01F10/30;H01F10/32;H01L21/8246;H01L27/105;H01L43/08;(IPC1-7):G11B5/39;B32B7/02 |
主分类号 |
G01R33/09 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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