| 摘要 |
PROBLEM TO BE SOLVED: To turn a buffer layer into columnar crystal of high density without deteriorating it in surface state by a method in which the buffer layer is turned into columnar crystal after a dielectric film is formed on its surface. SOLUTION: An N-GaN contact layer 4, an N-GaN clad layer 5, a Zn-doped GaInN active layer 6, a P-GaN clad layer 7, and a P-GaN contact layer 8 are successively regrown on a GaN buffer layer 2 of columnar crystal. Thereafter, an etching mask is formed on the P-GaN contact layer 8, and the laminate composed of the layers 4 to 8 is dry-etched as far as a part of the N-GaN contact layer 4. Then, a P-side electrode 9 and an N-side electrode 10 are formed, and the laminate with the electrodes 9 and 10 is divided into light emitting diode element chips of nitride compound semiconductor. A light emitting diode device of this structure is possessed of an epitaxial layer uniform in crystal orientation, so that it is lessened in light scattering loss, and a regrown nitride compound layer is improved in crystallinity. |
