| 摘要 |
PROBLEM TO BE SOLVED: To enable a substrate to be easily cleaved in a direction vertical to its surface and a semiconductor laser to be manufactured high in yield even if the substrate of silicon is used by a method in which a nitride compound semiconductor layer is formed on a silicon substrate with a surface of (HKL) plane of orientation or equivalent plane. SOLUTION: An N-type gallium later 102 doped with selenium and 2μm thick is grown on an N-type silicon (110) substrate 101. Then, an impurity non- doped In0.1 Ga0.9 N103 100nm in thickness and a P-type gallium nitride 104 1μm in thickness and doped with zinc are successively grown. Lastly, an N-electrode 105 and a stripe-like P-electrode 106 are provided, and the silicon substrate 101 is cleaved on its (1, -1, 1) plane 107, by which a cavity mirror surface is formed, and thus a semiconductor laser device is obtained. The semiconductor laser device of this constitution is provided with cavity mirror planes which are formed by cleavage and excellent in parallelism.
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