| 摘要 |
PROBLEM TO BE SOLVED: To reduce dust due to peeling from a sputtered film from chamber shielding plates and to enhance the productivity of a semiconductor substrate by a method, wherein the temperature of adhesion-preventing plates, which are respectively arranged on parts other than a semiconductor wafer in a chamber, is always controlled at a constant temperature including the time during a treatment of the wafer and the time subsequent to the treatment for performing the treatment on the wafer. SOLUTION: Shielding plates 17a, 17b and 17c are respectively arranged on parts other than a semiconductor wafer 8 in a process chamber 11, as the adhesion-preventing plates. That is, the wafer shielding plates 17a, the side shielding plates 17b and the target shielding plates 17c are respectively provided on the peripheries of the wafer 8, the inner walls of the chamber 11 and the peripheries of a target 16. These shielding plates 17a, 17b and 17c are respectively provided with a temperature control function, the temperature of the shielding plates 17a, 17b and 17c is controlled at a prescribed temperature, and the generation of the peeling of the sputtered film from the plates 17a, 17b and 17c, which is caused by a difference between the thermal expansion of the sputtered film and the plates 17a, 17b and 17c due to the difference between the temperatures of the sputtered film and the plates 17a, 17b and 17c, is prevented. |
