发明名称 |
Differential poly-edge oxidation for stable SRAM cells |
摘要 |
An SRAM cell having improved stability includes pass transistors having gate electrodes which are shaped by oxidation so that the lower edges of the gate electrodes are raised away from the substrate surface. Because the gate electrodes of the load and pull-down transistors are masked during the oxidation process, the gate electrodes of the load and pull-down transistors have the conventional rectangular shape. The modified shape of the gate electrodes of the pass transistors decreases the current flowing through the pass transistors relative to that which flows through the pull-down transistors, reducing the likelihood that data can inadvertently be lost from the SRAM cell. <IMAGE> |
申请公布号 |
EP0821413(A1) |
申请公布日期 |
1998.01.28 |
申请号 |
EP19960112137 |
申请日期 |
1996.07.26 |
申请人 |
UNITED MICROELECTRONICS CORPORATION |
发明人 |
SUN, SHIH-WEI |
分类号 |
H01L21/8244;H01L27/11;H01L29/423 |
主分类号 |
H01L21/8244 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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