| 摘要 |
The power semiconducting element contains a semiconducting substrate (1) and several corrugated regions (2). The substrate is of one conductivity type and is bounded by two main surfaces. The corrugated regions (2) are of opposite conductivity and are recessed into the first main surface and a flow inhibiting material (3). The flow inhibiting material inhibits the flow of charge carriers of the second conductivity type from the substrate into the corrugated regions against the axial direction, but allows the flow of charge carriers in the lateral direction essentially perpendicular to the axial direction. |
