| 摘要 |
<p>A plasma etching apparatus (100) has a central processing chamber (101), an upper exhaust chamber (103) thereabove, and a lower exhaust chamber (105) therebelow. The processing chamber (101), the upper exhaust chamber (103), and the lower exhaust chamber (105) are airtightly formed by a central casing part (CC), an upper casing part (UC), and a lower casing part (LC) which are separably combined. The upper and lower exhaust chambers (103, 105) are respectively connected to upper and lower exhaust pumps (124, 132). A susceptor (114) having a support surface (114a) for supporting a target object (W), and an upper electrode or shower head (102) opposing it are arranged in the processing chamber (101). A processing gas spouted through the shower head (102) flows upward and downward toward the upper and lower exhaust chambers (103, 105) via the processing chamber (101). <IMAGE></p> |
