| 摘要 |
PCT No. PCT/DE96/00553 Sec. 371 Date Dec. 18, 1997 Sec. 102(e) Date Dec. 18, 1997 PCT Filed Mar. 29, 1996 PCT Pub. No. WO96/32740 PCT Pub. Date Oct. 17, 1996In the manufacture of semiconductor components, a SiC single crystal is exposed, during storage or transport between two process steps, to an oxygen-containing gas atmosphere, for example air. In order to prevent an oxide coating from forming on the SiC surface of the SiC single crystal, a carbon coating which does not react chemically with oxygen, preferably a graphite coating, is produced on said SiC surface. |
