发明名称 |
Hemispherical-grained silicon top-gate electrode for improved soft-error immunity in SRAMs |
摘要 |
<p>An SRAM cell having improved soft error immunity connects each of the storage nodes of the SRAM cell to an overlying electrode having a textured surface which is separated from a constant potential plate electrode by a dielectric layer. The textured surface of the overlying electrode may be created by forming hemispherical-grained silicon on its surface, or by forming a fin structure on its surface. The textured surface of the overlying electrode provides increased capacitance between the overlying electrode and the constant potential plate electrode, thereby increasing the capacitance of the storage node. <IMAGE></p> |
申请公布号 |
EP0821412(A1) |
申请公布日期 |
1998.01.28 |
申请号 |
EP19960111963 |
申请日期 |
1996.07.24 |
申请人 |
UNITED MICROELECTRONICS CORPORATION |
发明人 |
SUN, SHIH-WEI |
分类号 |
H01L27/11;(IPC1-7):H01L27/11 |
主分类号 |
H01L27/11 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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