| 摘要 |
PROBLEM TO BE SOLVED: To stably manufacture a semiconductor device having excellent characteristics at low cost by a method wherein a compound semiconductor substrate is a semi-insulating substrate having a resistivity lower than a specific value, and an element isolation region, which is formed by an ion-implanting method, is provided between a plurality of elements of said substrate. SOLUTION: A plurality of elements are provided on a compound semiconductor substrate 1. In the semiconductor device as above-mentioned, the compound semiconductor substrate 1 is a semi-insulating substrate having a resistivity of 1E+7 (Ω-cm) or lower. An element isolation region 4, which is formed by ion-implanting method, is provided on the region between the plurality of elements on the substrate 1. An active layer 2 is formed by ion-implanting method on the semi-insulating substrate 1, consisting of a compound semiconductor of GaAsm fir example, having the resistivity of 1E+7(Ω-cm) or lower, an ohmic electrode 3 is formed on the surface of the active layer 2 and a plurality of resistive elements are provided. Besides, insulating type ions are implanted to the circumference of the resistive element, and an insulating layer (element isolation region) 4 is formed.
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