发明名称 RINSING SOLUTION COMPOSITION FOR LITHOGRAPHY AND TREATMENT OF SUBSTRATE WITH THE SAME
摘要 PROBLEM TO BE SOLVED: To obtain a rinsing soln. compsn. not corroding the metallic thin film of a substrate by using a water-soluble org. solvent and water. SOLUTION: This rinsing soln. compsn. used for rinsing a substrate for production of a semiconductor device or a liq. crystal panel device subjected to peeling treatment with a hydrofluoride-contg. peeling soln. contains 20-90wt.%, preferably 40-80wt.% water-soluble org. solvent and 10-80wt.%, preferably 20-60wt.% water. The org. solvent is preferably at least one selected from among alcohol, glycol monoether and an aprotic polar solvent. It is especially preferably monohydric alcohol such as methanol, ethanol or isopropanol.
申请公布号 JPH1026832(A) 申请公布日期 1998.01.27
申请号 JP19960199574 申请日期 1996.07.11
申请人 TOKYO OHKA KOGYO CO LTD 发明人 TANABE MASAHITO;WAKIYA KAZUMASA;KOBAYASHI MASAICHI;NAKAYAMA TOSHIMASA
分类号 G03F7/32;G03F7/42;H01L21/02;H01L21/027;H01L21/304;H01L21/3213;(IPC1-7):G03F7/32;H01L21/308 主分类号 G03F7/32
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