ETCHING GAS AND CLEANING GAS

摘要

PROBLEM TO BE SOLVED: To enable etching and a chamber cleaning operation to be carried out well, by a method wherein etching gas which contains gas selected out of three kinds of specific gases if formed for etching an Si film, an SiO2 film, Si2 N4 film or a high-melting point metal silicide film. SOLUTION: An Si film, an SiO2 film, Si4 N4 film or a high-melting point metal silicide film as a processing target film is etched by use of gas selected out of three kinds of gases represented by formulas as etching gas and plasma CVD cleaning gas used in a semiconductor production process. By this setup, etching and a chamber cleaning operation can be carried out well without using CF4 , C2 F6 , C4 F8 , and SF6 which are much higher in earth warming coefficient than carbon dioxide.