HALFTONE PHASE SHIFT MASK BLANK, AND HALFTONE PHASE SHIFT MASK

摘要

PROBLEM TO BE SOLVED: To obtain a halftone phase shift mask blank which can control reflectance to exposure light and transmittance for inspection wavelength and has a translucent film also having conductivity by forming a zirconium compd. thin film as the translucent film. SOLUTION: The zirconium compd. thin film is formed on a transparent quartz glass substrate 1 by sputtering using a zirconium target in a reactive gas atmosphere containing nitrogen and oxygen to obtain the phase shift mask blank having a translucent film 2. The zirconium compd. thin film is preferably one of zirconium oxide film, zirconium nitride film and zirconium oxide nitride film. An electron beam resist is applied on the phase shift mask blank and subjected to sequential patterning processes to obtain a single-layer halftone phase shift mask comprising a translucent film pattern 2a.