发明名称 |
Semiconductor device including active matrix circuit |
摘要 |
A combination of a doping process and the use of side walls which allows the source and drain of a thin film transistor of an active matrix circuit to be doped with only one of N-type and P-type impurities and which allows the source and drain of a thin film transistor used in a peripheral circuit of the same conductivity type as that of the thin film transistor of the active matrix circuit to include both of N-type and P-type impurities. Also, a thin film transistor in an active matrix circuit has offset regions by using side walls, and another thin film transistor in a peripheral circuit has a lightly doped region by using side walls.
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申请公布号 |
US5712495(A) |
申请公布日期 |
1998.01.27 |
申请号 |
US19970807001 |
申请日期 |
1997.03.10 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
SUZAWA, HIDEOMI |
分类号 |
G02F1/136;G02F1/1368;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/78;H01L29/786;(IPC1-7):H01L29/04;H01L31/36;H01L31/376 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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