摘要 |
A semiconductor device having a reduced junction capacitance of the source and drain and a method for manufacturing same. The method includes the steps of selectively forming an element separating region on a main surface of a <100> oriented semiconductor substrate of a first conductivity type, a step of providing a gate electrode on the region separated by the element separating region with an intervening insulating film, and a step of implanting impurities of a second conductivity type in regions under the source and drain regions using the gate electrode as a mask and with a predetermined angle of ion implantation to generate a channeling implantation condition.
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