发明名称 |
SEMICONDUCTOR DEVICE AND FABRICATION THEREOF |
摘要 |
<p>PROBLEM TO BE SOLVED: To obtain a good quality of display without flickering by suppressing influences of a high-resistance region caused by an error in its dimensions when an error in the aligning accuracy is essentially present. SOLUTION: In the semiconductor device, high-resistance regions 102 and 103 are provided so as to dispose channel; region 107 there between, and high- resistance regions 108 and 109 are formed so as to dispose a channel region 109 therebetween. In this case, it is assumed that dimensions of the high- resistance regions 102 and 103 are different from those of the high-resistance regions 108 and 110 due to a aligning error during their fabrication. When the number of such channel regions are set to be even, symmetry in the operation of the thin-film transistor can be secured even when the aligning error is produced. Influences of information written in a pixel electrode 114 by a disturbance in the above symmetry can be avoided.</p> |
申请公布号 |
JPH1027913(A) |
申请公布日期 |
1998.01.27 |
申请号 |
JP19960199644 |
申请日期 |
1996.07.09 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
CHIYOU KOUYUU;TERAMOTO SATOSHI |
分类号 |
G02F1/1343;G02F1/136;G02F1/1368;H01L21/336;H01L29/786;(IPC1-7):H01L29/786;G02F1/134 |
主分类号 |
G02F1/1343 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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