| 发明名称 |
Semiconductor device with passivation layer of benzocyclobutene polymer and silicon powder |
| 摘要 |
In a semiconductor device having a passivation layer, the passivation layer is made of benzocyclobutene polymer and silicon power.
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| 申请公布号 |
US5712506(A) |
申请公布日期 |
1998.01.27 |
| 申请号 |
US19950547727 |
申请日期 |
1995.10.26 |
| 申请人 |
NEC CORPORATION |
发明人 |
SHIMOTO, TADANORI;MATSUI, KOJI |
| 分类号 |
H01L21/312;H01L23/29;(IPC1-7):H01L23/58 |
主分类号 |
H01L21/312 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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