| 摘要 |
<p>PROBLEM TO BE SOLVED: To remove the distortion inside crystal and the processing distortion by a method wherein a lifted up single crystal is bored in a bowl state to be sliced and then the sliced wafers are polished to be heated and annealed while being heated. SOLUTION: A crystal such as a lifted up LiTaO3 , etc., is bored in a bowl state and then processing steps such as orientation flat grinding, slicing, lapping, back roughening, bevelling, etc., are performed. Finally, a plurality of wafers 1 are laminated to be heated and annealed by a heating mechanism while being pressurized according to a specific temperature profile. Through these procedures, the distortion inside a crystal and the processing distortion can be removed.</p> |
