发明名称 |
Method of manufacturing a bipolar transistor |
摘要 |
In a semiconductor apparatus having a PNP bipolar transistor and high voltage resistance, there is formed an oxide insulating layer in the surface region of a P-type semiconductor substrate. In the above semiconductor substrate is formed a P-type collector layer so that at least a part of the P-type collector layer is in contact with said oxide insulating layer. In the surface region of said P-type collector layer is formed a P-type collector contact layer. An N-type base layer is formed in that region on the surface side of said P-type collector layer in which said P-type collector contact layer does not exist. A P-type emitter layer is formed on the surface side of said N-type base layer. A P-type collector-contact/base leakage prevention layer, which has a higher impurity concentration than said P-type collector layer, is formed at least in that region of said P-type collector layer which is in contact with said oxide insulating layer, so as to prevent the generation of a leakage current between said P-type collector contact layer and said N-type base layer.
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申请公布号 |
US5712174(A) |
申请公布日期 |
1998.01.27 |
申请号 |
US19960618115 |
申请日期 |
1996.03.19 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
HIRAI, TAKEHIRO;TANAKA, MITSUO;HORI, ATSUSHI;SHIMOMURA, HIROSHI;HORIKAWA, YOSHIHIKO |
分类号 |
H01L21/331;H01L21/70;H01L21/76;H01L21/822;H01L21/8222;H01L21/8249;H01L27/06;(IPC1-7):H01L21/265 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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