发明名称 Plasma processing apparatus
摘要 A plasma processing apparatus includes a vacuum vessel, a substrate electrode, a discharge coil which is partially or wholly made to have a multiple spiral or helical configuration, a high frequency power source, and a matching circuit that is connected to the discharge coil by way of a conductor wire and connected to the high frequency power source via a connection cable. Plasma is generated inside the vacuum vessel upon application of a high frequency voltage to the discharge coil so as to process a substrate disposed on the substrate electrode.
申请公布号 US5711850(A) 申请公布日期 1998.01.27
申请号 US19960651606 申请日期 1996.05.22
申请人 MATSUHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 OKUMURA, TOMOHIRO;NAKAYAMA, ICHIRO;YANAGI, YOSHIHIRO
分类号 H05H1/46;C23C16/50;C23C16/507;C23F4/00;H01J37/32;H01L21/203;H01L21/205;H01L21/302;H01L21/3065;(IPC1-7):C23C16/00 主分类号 H05H1/46
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