发明名称 |
Plasma processing apparatus |
摘要 |
A plasma processing apparatus includes a vacuum vessel, a substrate electrode, a discharge coil which is partially or wholly made to have a multiple spiral or helical configuration, a high frequency power source, and a matching circuit that is connected to the discharge coil by way of a conductor wire and connected to the high frequency power source via a connection cable. Plasma is generated inside the vacuum vessel upon application of a high frequency voltage to the discharge coil so as to process a substrate disposed on the substrate electrode.
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申请公布号 |
US5711850(A) |
申请公布日期 |
1998.01.27 |
申请号 |
US19960651606 |
申请日期 |
1996.05.22 |
申请人 |
MATSUHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
OKUMURA, TOMOHIRO;NAKAYAMA, ICHIRO;YANAGI, YOSHIHIRO |
分类号 |
H05H1/46;C23C16/50;C23C16/507;C23F4/00;H01J37/32;H01L21/203;H01L21/205;H01L21/302;H01L21/3065;(IPC1-7):C23C16/00 |
主分类号 |
H05H1/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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