SOI TRANSISTOR AND MANUFACTURE THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device having an SOI transistor and also to provide a method for manufacturing the device. SOLUTION: In the transistor, a channel region 54 and a source region 52 are partially contacted simultaneously with a part region of an insulating film 46 and a part region of a conduction film 49 having a doping concentration higher than that if the channel region 54. Thereby the movement of holes to the source region 52 can be facilitated so that the accumulation of excessive holes in the channel region 54 can be avoided, variations in the threshold voltage of the transistor can be prevented, and a floating body effect(FBE) can be also suppressed. Further, since the conduction film 49 is doped with impurities at a high concentration, these impurities act as a stopper for blocking punch through between the source 52 and drain 50, thus improving an SCE in the transistor.