| 摘要 |
PURPOSE:To provide a method for forming and removing a selective growth mask which can be employed in a vacuum through process while suppressing the adverse effect on the crystallinity and exhibiting required resistance against any type of material gas. CONSTITUTION:The temperature of a GaAs substrate 201 is set to 630 deg.C and a Ga rich surface is provided on a GaAs butter layer 202. Dimethy hydrazine is then introduced thus depositing a GaN film 203 on the surface of the GaAs butter layer. The GaAs substrate is placed in an oxygen atmosphere and the surface of the GaN film is irradiated with the light from a halogen lamp thus forming a GaO1-xNx 204. Subsequently, the surface of GaO1-xNx is irradiated with chloride gas and scanned by means of an electron beam. Consequently, the GaO1-xNx and GaN film are removed from the region scanned by the electron beam and serve as a mask for selective growth in other regions. |
