Method for producing a low resistivity polycide

摘要

A semiconductor fabrication technique is provided for producing a low resistivity polycide. Polycide resistivity is lowered by minimizing areas where the polycide is unduly thin. By preparing the polysilicon upper surface prior to polycide formation thereon, the polysilicon surface can grow polycide at a uniform rate across the entire polysilicon surface. The polysilicon surface is prepared by either restricting doping atoms at grain boundary locations at the polysilicon surface, or by disrupting the grain boundaries by ion implanting that surface. In either instance, a properly prepared polysilicon surface greatly enhances the conductivity of polycide grown thereon.