| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device so as to have a narrower slit width between buried conductive layers than the minimum size by an ordinary method together with high integration and high reliability allowing miniaturization of the semiconductor device. SOLUTION: A polycrystalline silicon film 109 is formed on a semiconductor substrate 1 on a semiconductor substrate 101 where impurity diffusion layers 106, 108, a gate insulating film 103 and a gate electrode 104 of which the upper surface and the side are covered with the insulating film 105, 107, and this Si film is removed by etching by means of a known photolithography method so as to form a buried conductive layer 109. Next, a second polycrystalline film 111 is deposited and the second polycrystalline silicon film is etched while covering the side of the buried conductive layer 109 for being remained so as to form a buried conductive layer 112. Later, heat treatment is performed so as to form an interlayer insulating film 113, to open a connection hole 114, to form a storage node electrode 115, an inductor film 116, a cell plate electrode 117, a flattening insulating film 118, a bit connection hole 119 and a metal wiring 120 in order to complete a DRAM. |
