| 摘要 |
PROBLEM TO BE SOLVED: To suppress the fatigue of oxides of Pb, Ti and Zr to stabilize the characteristics by doping these oxides with at least one of elements Mo, Sb, Ta and W. SOLUTION: An SiO2 layer insulation layer 7 is formed on approximately the entire surface of a semiconductor substrate at an element forming part, a Pt or similar metal layer is formed on the entire surface of the layer 7 and pattern-etched to form lower electrodes 8 and upper electrodes 10 are formed on the electrodes 8 through a ferroelectric layer 9 which is made of oxides of Pb, Ti and Zr doped with at least one element selected from among Mo, Sb, Ta and Ta. This suppresses the fatigue of these oxides. |
