| 摘要 |
PROBLEM TO BE SOLVED: To make a light reception in a confocal position possible without generating any external feedback offset, by forming an insulation film stripe on a GaAs substrate to provide a specific structure in the vicinity of the insulation film stripe. SOLUTION: On an n-type GaAs semiconductor substrate 11 having a crystalline plane [100] as its principal surface, respective semiconductor layers 12-15 configuring a semiconductor laser are subjected to epitaxial growths by an MOCVD method, etc. Then, after forming an insulation film stripe 16 out of SiN, a stripe ridge to become a pattern on the stripe 16 is formed by etching. Thereafter, a current blocking layer comprising an n-type GaAs layer 18 is formed to complete the structure of the semiconductor laser. Subsequently, an n-type GaAs layer 19 and an i-type GaAs layer 20 are made to grow, and further, a p-type GaAs layer 21 is laminated thereon. In this way, since a halved structure can be given in a self-aligning way to a photodiode formed on the semiconductor laser, a light reception in a confocal position is made possible. |
