| 摘要 |
PROBLEM TO BE SOLVED: To accurately manufacture a vibrator base body and form a piezoelectric thin film without deteriorating electric characteristics, by forming the vibrator base body of a silicon single crystal by photolithography and anisotropic etching, forming the piezoelectric thin film on a lower electrode and it is subjected to a heat treatment. SOLUTION: A photoresist 210 is applied to the lower face of a wafer 10. The photoresist at a position where a vibrator is formed is removed by photolithography. An Si3 N4 film 202 without the photoresist is removed by reactive ion etching, thereby to expose silicon. Then, a photoresist 220 is applied to an upper face of the wafer to form a resist pattern of a lever part. Moreover, the Si3 N4 film is removed. A PZT (lead titanate zirconate) film 20 is formed with the use of a metal mask by RF sputtering. Subsequently, the PZT film is subjected to a heat treatment to be crystallized. Finally, an Al film is formed on the PZT thin film 20 as three split upper electrodes 30, 31, 40 by a lift-off method. |
