| 摘要 |
<p>PROBLEM TO BE SOLVED: To remove a recessed part due to a contact hole and to prevent the generation of the defect of orientation and color slippage even in the vicinity of the contact hole by forming a thick pixel electrode in the contact hole part. SOLUTION: A gate signal line 2 and a capacity line 4 are formed on a transparent substrate 1 and a gate insulating film 6 is formed so as to cover them. A semiconductor layer 7, a channel protection layer 8, a source electrode 9 and a drain electrode 10 are formed on a place on which TFT is formed. After forming a source signal line 3 and a connecting electrode 13, an intra-layer insulation film 14 is formed and a contact hole 15 is provided on the intra-layer insulation film 14. A whole substrate is flatly coated with coating type ITO as a transparent conductive film of a pixel electrode 5, dryed and calcined. The flat pixel electrode 5 is formed by patterning the transparent conductive film in a desired shape and made an active matrix substrate.</p> |
