| 摘要 |
PROBLEM TO BE SOLVED: To add a specified heat resistance to a resist pattern by irradiating a pattern composed of an org. film at controlled temp. with light of specified wavelength while controlling the film to specified temp. SOLUTION: This device is composed of a lamp 1 which emits light in a wavelength region around 185nm emission line, a half mirror 2 which cuts light of >500nm wavelengths, a lamp house 3, a shutter 4, a wafer sucking bed 5, etc. The wafer sucking bed 5 is equipped with a tube 6 for a fluid to control temp. through which a fluid kept at 20 deg.C is made to pass to maintain the surface temp. at 20 deg.C. First, a silicon wafer with a resist pattern formed in lithographic processed is sucked on the wafer sucking bed 5. In this state, by opening the shutter 4, for example, for 60sec, the wafer is irradiated with light including the wavelength region around the 185nm emission line, while the region of >=500nm wavelengths is cut. Thereby, heat resistance against >=200 deg.C is added to the resist pattern. |
