| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor storage device allowing the power consumption to be reduced, without losing the degree of integration. SOLUTION: The node NC of a memory cell 1 is connected to a bit line BL1 through a row connecting NMOS transistor Qh. A column selection signal CS1 is given to NMOS transistors Qg and Qh which are disposed between access transistors Da, Qb for two memory cells 1a, 1b adjacent in the row direction and bit lines BL, bar BL. |
