| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory in which the cell of a spare column can be tested before a fuse corresponding to a defective column is laser-cut. SOLUTION: A line 2 is connected with NMOSFETs 5, 6 through first and second fuses 3, 4, respectively. The NMOSFETs 5, 6 are connected, respectively, with the first and second address signal terminals 7, 8. The NMOSFETs 5 is connected in series with a PMOSFET 9 which is interrupted by feeding a power supply voltage to the gate thereof. Under that state, a signal is fed only to the first signal terminal 7. |
