发明名称 MEMORY TEST CIRCUIT
摘要 PROBLEM TO BE SOLVED: To provide a short test circuit with the small number of test terminals and with a short test time for the test of ROM and RAM incorporated in LSI. SOLUTION: A test clock is inputted from an external input terminal 301 and test data is inputted from the external input terminal 302. The test clock is counted by a counter 303 and test data is latched by a register 304. A RAM control circuit 305 generates a RAM and ROM address signal 306 for testing, a RAM and ROM precharge signal 307 and a RAM read/write signal 308, data of the register 304 is written in RAM 318 and, after that, ROM 319 and RAM 318 are read and the output of a coincidence circuit 320 is outputted to an external output terminal 323. Thus, RAM and ROM are tested.
申请公布号 JPH1021150(A) 申请公布日期 1998.01.23
申请号 JP19960176860 申请日期 1996.07.05
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 OHASHI MASAHIRO;NISHISASHI MASANORI
分类号 G01R31/28;G06F11/22;G06F12/16;G11C29/00;G11C29/02 主分类号 G01R31/28
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