| 摘要 |
PROBLEM TO BE SOLVED: To prevent a damage caused by peeling off of a thin film by forming a continuous groove, which encloses an observation area, on an cutting area in non-impacting working method before a part which includes the observation area is cut not from a sample piece, and then cutting the cutting area. SOLUTION: A groove corresponding to a groove formation area 4 (about 100μm in width), wherein a cutting area 5 which needs a dicing saw and is, for example, about 50μm, is widened by about 25μm in a side, about 50μm in both sides, is formed until the depth reaching a semiconductor. A convergence ion beam which causes no impact is used for formation, so that, an insulation film 2 is not peeled off when the groove is formed, and the groove which prevents propagation of peeling can be effectively formed. Thereby, all accumulation materials including the insulation film 2 which is easy to peel are removed from the semiconductor substrate 1 surrounding the area 5 where the dicing saw directly contacts to a sample, and damage of the sample caused by this is prevented.
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