| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor light emitting device which terminates dangling bonds such as dislocation and defects and prevents lowering of light emitting intensity. SOLUTION: A semiconductor light emitting device is manufactured by growing a plurality of II-VI compound semiconductor layers on a substrate 1 by solid-source molecular beam epitaxial method. When growing a layer as an active layer and a layer as a guide layer among the plurality of II-VI compound semiconductor layers, hydrogen is emitted in the form of plasma generated from a plasma generating chamber 24, or in atomic or molecular form from a gas cracking cell 27. The background pressure of the hydrogen is 5×10<-6> Torr. Note that when growing a layer as a p-type conductive layer among the II-VI compound semiconductor layers, the hydrogen is not emitted. |
