| 摘要 |
PROBLEM TO BE SOLVED: To provide a multilayer lamination type photovoltaic device with a high photoelectric conversion efficiency and a low cost, by making its bottom layer comprise both an ionic bond type thin film containing at least crystallines and a polycrystal silicon layer formed thereon. SOLUTION: Heating a pyrex substrate 1 in a reaction chamber at, e.g. 300 deg.C and using an Ar gas as a carrier gas after exhausting air therefrom, acethylacetone zinc, H2 O and B2 H6 are introduced into the reaction chamber to make them react on each other under the adjusted pressure of 1300Pa in a predetermined time and to form a ZnO:B thin film 2. Further, heating the film 2 in a vacuum chamber and generating simultaneously a silicon vapor and a molecular beam of boron from an Si source and a Knudsen cell, a p-type polycrystal silicon film 3 is formed, and then, generating a molecular beam of phosphorus from the Knudsen cell, an n-type polycrystal silicon thin film 4 is formed. Subsequently, disposing this substrate in a sputtering equipment, p-type and n-type SiO2 -doped Si thin films 7, 8 and an ITO thin film 9 are formed in succession to obtain a photovoltaic device with an excellent orientation quality, a low cost and a high photoelectric conversion efficiency. |
