| 摘要 |
PROBLEM TO BE SOLVED: To obtain a device having a wide application which can function as a mask ROM and incorporate PC initializing works in a RAM to form a single chip device by forming flip-flop structured memory cells so that one resistance of each cell is higher than the other resistance. SOLUTION: The semiconductor storage device comprises memory cells, each having a pair of transfer gate transistors Q3, Q4, pair of pull down transistors Q1, Q2 and pair of resistances R1, R2 which are cross coupled with use of a load to form a flip-flop structure. One resistance R1 or R2 of each cell forming the flip flop structure is made higher than the other resistance R2 or R1. Owing to this, at power on, specified data is automatically latched to operate the device as a mask ROM. |
